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this is information on a product in full production. november 2013 docid024298 rev 2 1/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 n-channel 600 v, 0.108 typ., 26 a mdmesh ii plus? low q g power mosfets in to-220fp, i 2 pak, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? mdmesh? ii technology ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications ? lcc converters, resonant converters description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. to-220 1 2 3 tab to-220fp 1 2 3 to-247 1 2 3 1 2 3 tab i pak 2 am15572v1 , tab order codes v ds @ t jmax r ds(on) max i d STF33N60M2 650 v 0.125 26 a (1) 1. limited by maximum junction temperature. sti33n60m2 26 a stp33n60m2 stw33n60m2 table 1. device summary order codes marking package packaging STF33N60M2 33n60m2 to-220fp tube sti33n60m2 i 2 pak stp33n60m2 to-220 stw33n60m2 to-247 www.st.com
contents STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 2/19 docid024298 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid024298 rev 2 3/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 electrical ratings 19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit i 2 pak, to-220 to-247 to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 26 26 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 16 16 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 104 104 (1) a p tot total dissipation at t c = 25 c 190 35 w dv/dt (3) 3. i sd 26 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; tc = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220fp i 2 pak, to-220 to-247 r thj-case thermal resistance junction-case max 3.6 0.66 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 5a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 2300 mj
electrical characteristics STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 4/19 docid024298 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 13 a 0.108 0.125 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1781 - pf c oss output capacitance - 85 - pf c rss reverse transfer capacitance -2.5-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 135 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5.2 - q g total gate charge v dd = 480 v, i d = 26 a, v gs = 10 v (see figure 19 ) - 45.5 - nc q gs gate-source charge - 9.9 - nc q gd gate-drain charge - 18.5 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d (on) turn-on delay time v dd = 300 v, i d = 13 a, r g = 4.7 , v gs = 10 v (see figure 18 and figure 23 ) -16-ns t r (v) voltage rise time - 9.6 - ns t d (off) turn-off-delay time - 109 - ns t f (i) fall time - 9 - ns
docid024298 rev 2 5/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 electrical characteristics 19 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 26 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 104 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 26 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 26 a, di/dt = 100 a/s v dd = 60 v (see figure 23 ) - 375 ns q rr reverse recovery charge - 5.6 c i rrm reverse recovery current - 30 a t rr reverse recovery time i sd = 26 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 23 ) - 478 ns q rr reverse recovery charge - 7.7 c i rrm reverse recovery current - 32.5 a
electrical characteristics STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 6/19 docid024298 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp i d 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse 10 100 am17917v1 figure 4. safe operating area for i 2 pak and to-220 figure 5. thermal impedance for i 2 pak and to-220 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 tj=150c tc=25c single pulse 100 am17906v1 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 tj=150c tc=25c single pulse 100 am17918v1
docid024298 rev 2 7/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 electrical characteristics 19 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 50 30 10 0 0 5 v ds (v) 10 (a) 15 4v 5v v gs =7, 8, 9, 10v 20 40 60 6v 20 am17907v1 i d 60 40 20 0 0 4 v gs (v) 8 (a) 2 6 10 10 30 50 v ds =17v am17908v1 v gs 6 4 2 0 0 20 q g (nc) (v) 8 30 40 10 v dd =480v i d =26a 12 300 200 100 0 400 500 v ds 10 50 v ds (v) am17909v1 r ds(on) 0.108 0.106 0.104 0 10 i d (a) ( ) 5 15 0.110 v gs =10v 20 25 0.112 0.114 am17910v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 10000 am17911v1 e oss 4 2 0 0 100 v ds (v) (j) 400 200 300 6 500 600 8 10 12 am17912v1
electrical characteristics STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 8/19 docid024298 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. normalized v ds vs temperature figure 17. source-drain diode forward characteristics v gs(th) 1.0 0.9 0.8 0.7 -50 0 t j (c) (norm) -25 1.1 75 25 50 100 i d =250a am17913v1 r ds(on) 1.9 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 2.3 i d =13a v ds =10v am17914v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.91 0.93 0.95 0.97 0.99 1.01 1.03 1.05 i d =1ma 1.07 1.09 am17915v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 1 12 14 16 18 20 22 24 1.2 1.4 am17916v1
docid024298 rev 2 9/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 test circuits 19 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd !-v 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 10/19 docid024298 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024298 rev 2 11/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 package mechanical data 19 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 12/19 docid024298 rev 2 figure 24. to-220fp drawing 7012510_rev_k_b
docid024298 rev 2 13/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 package mechanical data 19 figure 25. i2pak (to-262) drawing table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 0004982_rev_h
package mechanical data STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 14/19 docid024298 rev 2 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024298 rev 2 15/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 package mechanical data 19 figure 26. to-220 type a drawing ?type!?2ev?4
package mechanical data STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 16/19 docid024298 rev 2 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024298 rev 2 17/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 package mechanical data 19 figure 27. to-247 drawing 0075325_g
revision history STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 18/19 docid024298 rev 2 5 revision history table 13. document revision history date revision changes 13-sep-2013 1 first release. 19-nov-2013 2 ? modified: r ds(on) and i d values in cover page ? modified: values in table 4 ? modified: r ds(on) typical and maximum values in table 5 , the entire typical values in table 6 , 7 and 8 ? added: section 2.1: electrical characteristics (curves) ? minor text changes
docid024298 rev 2 19/19 STF33N60M2, sti33n60m2, stp33n60m2, stw33n60m2 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com
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